Zinc oxide (ZnO) is a good GaN thin film (blue LED) substrate material, which has a 60 MeV exciton binding energy and a 3.73 EV band gap at room temperature, making it a UV and visible light-emitting material, It is expected to be widely used in high peak energy energy limiter, large diameter and high quality GaN substrate, future wireless communication beyond 5GHz, high electric field equipment, high temperature and high energy electronic devices, high electric field equipment, high temperature and high energy electronic devices, etc
Growth method
Hydrothermal method
crystal structure
Hexagons
Lattice constant (޹)
a=3.252    c=5.313
Crystallographic orientation
<0001>、<11-20>、<10-10>±0.5º
Dimension (mm)
25×25×0.5、10×10×0.5、10×5×0.5、5×5×0.5
Customized substrate with special direction and size according to customers' requirements
polishing
Single, double or cutting
Surface roughness
Surface roughness(Ra):<=5Å
AFM test report can be provided
physical property
Density (g / cm3)
Five point seven
Hardness (Mohs)
Four
Melting point (℃)
one thousand nine hundred and seventy-five
Coefficient of thermal expansion (/ ℃)
6.5 x 10-6 //a, 3.7 x 10-6 //c
Specific heat capacity (cal / g / ℃)
zero point one two five
Thermoelectric constant (MV / k)
1200 @ 300℃
Thermal conductivity (cal / cm / k)
zero point zero zero six
Transmission range
0.4-0.6 um > 50% at 2mm
packing
Class 100 clean bag, class 1000 super clean room

       氧化锌(ZnO)是很好的GaN薄膜(蓝光LED)衬底材料，具有60mev的激子束缚能以及室温下3.73ev带隙使之成为紫外以及可见光发光材料．同时由于具有可见区透明，机电耦合系数大，能使气体分子在其表面的吸附－解析等性质,有望在高峰值能量的能量限制器、大直径高质量的GaN的衬底、未来的5GHz之外的无线通信、高电场设备、高温高能电子器件、高电场设备、高温高能电子器件等方面得到广泛应用.