InSb is an important compound semiconductor, which is mainly used in far-infrared photodetectors, Hall devices and magnetoresistive devices.
Growth method
Tirafa
crystal structure
cube
Lattice constant (nm)
0. 648
Crystallographic orientation
< 100 >, < 110 >, < 111 > ± 0.5 º, or special direction
Doping degree
Dopant element
Undoped
Te doping
Ge doping
Conductive type
N
N
P
Band gap (EV)
zero point one eight
Resistivity (Ω· cm)
Mobility (cm2 / (V · s))
Carrier density (/ cm3)
1~5×1014
1~2×1015
Dislocation density (EPD) (/ cm2)
<2×102
size
Φ 2 ″× 0.5 special direction and size can be customized according to customer requirements
surface
Single, double, or cutting
Thickness (UM)
Φ 2 ″× 0.5mm, Φ 3 ″× 0.5mm, customized
TTV (Total Thickness
Variation)
TIR (Total Indicated
Reading)
Bow
Warp
packing
Class 100 clean bag, class 1000 super clean room
InSb是一种重要的化合物半导体，主要用于制作远红外光电探测器、霍耳器件和磁阻器件。
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生长方法
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提拉法
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晶体结构
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立方
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晶格常数(nm)
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0. 648
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晶向
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<100>、<110>、<111>±0.5º、或特殊方向
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掺杂程度
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掺杂元素
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不掺杂
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掺Te
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掺Ge
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导电类型
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N
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N
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P
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带隙（eV）
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0.18
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电阻率（Ω·cm）
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迁移率(cm2/(v·s))
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载流子密度（/cm3）
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1~5×1014
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1~2×1015
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位错密度（EPD）（/cm2）
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<2×102
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尺寸
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Φ2″×0.5可按照客户需求，定制特殊方向和尺寸
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表面
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单抛片、双抛片、或切割片
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厚度(um)
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Φ2″×0.5mm、Φ3″×0.5mm，可定制
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TTV (Total Thickness
Variation)
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TIR (Total Indicated
Reading)
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Bow
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Warp
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包装
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100级洁净袋，1000级超净室
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Simple substance