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GaAs single crystal substrate
Update Time : 2020-06-17 View : 6367


GaAs [1] is an important compound semiconductor material, which is used to make microwave integrated circuit, infrared light-emitting diode, semiconductor laser [2], infrared detection [3] and solar cell. GaAs single crystal substrates are also used to prepare nanostructured GaAs structures, such as GaAs nanowire array [4], GaAs nano cone array [5].
Growth method
Vertical gradient solidification (VGF) LEC HB
crystal structure
zinc blende structure
Lattice constant (nm)
zero point five six five three
Crystallographic orientation
(100)、(111)
Doping degree
Dopant element
Undoped
Zn doping
Si doping
Conductive type
Semi insulating
P
N
Band gap (EV)
One point four
Resistivity (Ω· cm)
Mobility (cm2 / (V · s))
Carrier concentration (/ cm3)
>5×1017
Dislocation density (EPD) (/ cm2)
<5×105
size
2-inch, 3-inch, 4-inch and 6-inch substrates can be customized with special directions and sizes according to customer requirements
surface
Single, double or cutting
Thickness (UM)
TTV (Total ThicknessVariation)
TIR (Total IndicatedReading)
Bow
Warp

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