Supply of gallium phosphide (GAP) crystal substrates, single crystals_ Manufacturer brand_ Shenzhen Pan American Metal Co., Ltd. welcomes customers to call us for consultation and negotiation of transactions, 18928450898
Basic parameters
Material: gallium phosphide
Model: gap
Characteristics: good insulation
Application: optics, semiconductor, aviation
Type: single crystal, polycrystal, semiconductor
Brand: Pan American metal
Process customization: Yes
Origin: Guangdong
detailed description
Product Name:
Gallium phosphide (GAP) crystal substrate
Product introduction:
Technical parameters:
Crystal structure:
Cubic a = 5.4505
Growth method:
Tirafa
Density:
4.13 g/cm3
Melting point:
1480 ℃
Coefficient of thermal expansion:
5.3 x10-6
Dopant:
S-doped; undoped
Thermal conductivity:
2~8 x1017/cm3 ；4~ 6 x1016/cm3
Resistivity w.cm:
~0.03 ；~0.3
EPD (cm-2 )：
< 3x10E5 ；< 3x10E5
General dimensions:
Conventional crystal direction: < 111 >; conventional size: 10x10x0.5mm, dia2 "x0.5mm; polishing condition: single or double polishing;
Note: the direction and size can be customized according to the customer's requirements.
remarks:
Class 1000 super clean room class 100 super clean bag
供应磷化镓(GaP)晶体基片、单晶片_厂家品牌_深圳泛美金属，欢迎广大客户来电咨询洽谈交易，18928450898
基本参数
材质：磷化镓
型号：GaP
特性：绝缘性好
用途：光学，半导体，航空
种类：单晶，多晶，半导体
品牌：泛美金属
加工定制：是
产地：广东
详细说明
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产品名称：
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磷化镓(GaP)晶体基片
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产品简介：
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技术参数：
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晶体结构：
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立方 a =5.4505
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生长方法:
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提拉法
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密度:
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4.13 g/cm3
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熔点:
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1480 ℃
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热膨胀系数：
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5.3 x10-6
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掺杂物质：
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掺S ；不掺杂
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热传导率：
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2~8 x1017/cm3 ；4~ 6 x1016/cm3
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电阻率W.cm：
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~0.03 ；~0.3
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EPD (cm-2 )：
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< 3x10E5 ；< 3x10E5
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常规尺寸：
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常规晶向：<111>；常规尺寸：10x10x0.5mm、dia2"x0.5mm；抛光情况：单抛或双抛;
注：可按客户需求定制相应的方向和尺寸。
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备注：
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1000级超净室100级超净袋
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